Innovative organic semiconducor technology
High Image Quality
Wide spectral imaging in multiple scenes
Cost optimization
The C100GE_SW640A features a new-generation visible-to-shortwave infrared CMOS image sensors, delivering high-resolution imaging across a broad spectral range from visible to shortwave infrared. With exceptional sensitivity, ultra-low dark current noise, and wide operating temperature range, this camera is ideal for demanding applications such as laser beam profiling, material sorting, and semiconductor inspection.
Through disruptive organic semiconductor design, cost-effective wide-spectrum, high-sensitivity near-infrared perception is achieved, improving quantum efficiency by 200% in near-infrared bands such as 940nm, 1064nm, and 1135nm.
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P/N |
C100GE_SW640A | |
| Body Dimensions | 52x52x64.2mm | |
| Pixel Pitch | 15 μm | |
| Spectral Range | 0.3 μm-1.5 μm | |
| Array Format | 640(H)x512(V) | |
| Frame Rate | 150fps@8bit | |
| Exposure Time | 50μs~1s | |
| Cooling Method | TEC | |
| Operation Temperature | -20℃~+50°C | |
| Storage Temperature | -30℃~+70°C | |
| Image Processing | Single-point Correction, Dead Pixel Correction, ROI, binng, etc. | |
| Shutter Type | Global | |
| Full Well Capacity | 1161ke- | |
| Singal-Noise Ratio | 56.2dB | |
| Dynamic Range | 69.9dB | |
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Readout Noise |
<350e-@LG |
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Gain |
Low Gain & High Gain |
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Bit Depth |
8bit/10bit/12bit/14bit |
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Data Interface |
GigE |
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Optical Mount |
C-Mount |
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Operating Voltage |
DC+10V~+28V (Typ. 12V) |
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Power Consumption |
< 8W (with cooling) |
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Product Dimensions (Unit: mm)
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